Basics of metal-oxide-semiconductor field-effect transistor (MOSFET) / H.H. Radamson -- Scaling and evolution of device architecture / H.H.
Radamson, E. Simeon, J. Luo, G. Wang -- Strain engineering / H.H. Radamson -- High-κ dielectric and metal gate / C. Zhao, X. Wang, W. Wang --
Channel materials / H.H. Radamson, E. Simeon -- Challenges in ultra-shallow junction technology / E. Simoen, H.H. Radamson -- Advanced
contact technology / J. Luo, K.P. Jia -- Advanced interconnect technology and reliability / Y. Li, C. Zhao

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.